Publications

[0] Shook, B.; Gong, Z.; Feng, Y.; Mantooth, H.A.; Francis, A.M.:
Multi-Chip Power Module Fast Thermal Modeling for Layout Optimization,
Proceedings of the 12th International CAD Conference. 2012.

[1] M. Mudholkar, M. Saadeh, and H. A. Mantooth, “A datasheet driven power MOSFET model and parameter extraction procedure for 1200V, 20A SiC MOSFETs,” in Proceedings of the 2011-14th European Conference on Power Electronics and Applications (EPE 2011), 2011, pp. 1-10.

[2] A. Escobar, M. Saadeh, J. C. Balda, J. Bourne, Yongfeng Feng, and H. A. Mantooth, “A methodology to coordinate solid-state fault current limiters with conventional protective devices,” in Power Systems Conference and Exposition (PSCE), 2011 IEEE/PES, 2011, pp. 1-6.

[3] Guoyuan Fu, H. A. Mantooth, and Jia Di, “A 12-bit CMOS current steering D/A converter with a fully differential voltage output,” in 2011 12th International Symposium on Quality Electronic Design (ISQED), 2011, pp. 1-7.

[4] Yongfeng Feng, M. Saadeh, A. Escobar, J. C. Balda, S. Ang, and H. A. Mantooth, “A solid state fault current limiter control algorithm,” in IPEC, 2010 Conference Proceedings, 2010, pp. 328-333.

[5] N. Hingora, Xiangyu Liu, Yongfeng Feng, B. McPherson, and A. Mantooth, “Power-CAD: A novel methodology for design, analysis and optimization of Power Electronic Module layouts,” in 2010 IEEE Energy Conversion Congress and Exposition (ECCE), 2010, pp. 2692-2699.

[6] J. Carr, J. C. Balda, and A. Mantooth, “A high frequency link multiport converter utility interface for renewable energy resources with integrated energy storage,” in 2010 IEEE Energy Conversion Congress and Exposition (ECCE), 2010, pp. 3541-3548.

[7] J. Carr, J. C. Balda, and A. Mantooth, “A matrix converter utility interface for grid resources with a high-frequency bus,” in 2010 IEEE Energy Conversion Congress and Exposition (ECCE), 2010, pp. 3202-3209.

[8] N. Hingora, Xiangyu Liu, B. McPherson, Yongfeng Feng, and H. A. Mantooth, “Concerning layout synthesis for power electronic multi-chip modules,” in 2010 IEEE 12th Workshop on Control and Modeling for Power Electronics (COMPEL), 2010, pp. 1-5.

[9] A. S. Kashyap, H. A. Mantooth, T. A. Vo, and M. Mojarradi, “Compact Modeling of LDMOS Transistors for Extreme Environment Analog Circuit Design,” IEEE Transactions on Electron Devices, vol. 57, no. 6, pp. 1431-1439, Jun. 2010.

[10] Y. Feng, E. Johnson, O. Saadeh, J. C. Balda, H. A. Mantooth, and M. Schupbach, “Impact of solid-state fault current limiters on protection equipment in transmission and distribution systems,” in Transmission and Distribution Conference and Exposition, 2010 IEEE PES, 2010, pp. 1-6.

[11] O. Kegege, M. Barlow, A. Mantooth, and R. Ulrich, “Mission optimization and tradeoffs of using SiGe based electronics for a cryogenic environment rover mission,” in 2010 IEEE Aerospace Conference, 2010, pp. 1-6.

[12] D. D. . Cardozo, J. C. Balda, D. Trowler, and H. A. Mantooth, “Novel nonlinear control of Dual Active Bridge using simplified converter model,” in 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2010, pp. 321-327.

[13] A. Lostetter, J. Hornberger, B. McPherson, B. Reese, R. Shaw, M. Schupbach, B. Rowden, A. Mantooth, J. Balda, T. Otsuka, K. Okumura, and M. Miura, “High-temperature silicon carbide and silicon on insulator based integrated power modules,” in IEEE Vehicle Power and Propulsion Conference, 2009. VPPC ’09, 2009, pp. 1032-1035.

[14] S. S. Ang, T. Tao, O. S. Saadeh, E. Johnson, B. Rowden, J. C. Balda, and A. Mantooth, “Packaging and characterization of silicon carbide thyristor power modules,” in Power Electronics and Motion Control Conference, 2009. IPEMC ’09. IEEE 6th International, 2009, pp. 264-268.

[15] J. Bourne, M. Schupbach, J. Carr, H. A. Mantooth, and J. Balda, “Initial development of a solid-state fault current limiter for naval power systems protection,” in IEEE Electric Ship Technologies Symposium, 2009. ESTS 2009, 2009, pp. 491-498.

[16] Yongfeng Feng and H. A. Mantooth, “Algorithms for Automatic Model Topology Formulation,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 28, no. 4, pp. 502-515, Apr. 2009.

[17] A. S. Kashyap, M. Mudholkar, H. A. Mantooth, T. Vo, and M. Mojarradi, “Cryogenic characterization of lateral DMOS transistors for lunar applications,” in 2009 IEEE Aerospace conference, 2009, pp. 1-8.

[18] K. J. Cornett, Guoyuan Fu, I. Escorcia, and H. A. Mantooth, “SiGe BiCMOS fully differential amplifier for extreme temperature range applications,” in 2009 IEEE Aerospace conference, 2009, pp. 1-10.

[19] J. A. Carr, D. Hotz, J. C. Balda, H. A. Mantooth, A. Ong, and A. Agarwal, “Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources,” IEEE Transactions on Power Electronics, vol. 24, no. 1, pp. 260-270, Jan. 2009.

[20] R. J. Castillo, D. Molina, M. S. Huertas, J. C. Balda, and H. A. Mantooth, “Testing of Power Electronic Modules for Distributed Systems at the National Center for Reliable Electric Power Transmission,” in IEEE Energy 2030 Conference, 2008. ENERGY 2008, 2008, pp. 1-5.

[21] J. A. Carr, J. C. Balda, Yongfeng Feng, and H. A. Mantooth, “Fault Current Limiter Placement Strategies and Evaluation in Two Example Systems,” in IEEE Energy 2030 Conference, 2008. ENERGY 2008, 2008, pp. 1-7.

[22] J. A. Carr, J. C. Balda, and H. A. Mantooth, “A Survey of Systems to Integrate Distributed Energy Resources and Energy Storage on the Utility Grid,” in IEEE Energy 2030 Conference, 2008. ENERGY 2008, 2008, pp. 1-7.

[23] Y. Feng, W. Zheng, A. M. Francis, and H. A. Mantooth, “Model order reduction by Miller’s theorem and root localisation,” IET Computers & Digital Techniques, vol. 2, no. 5, pp. 363-376, Sep. 2008.

[24] B. Hollosi, M. Barlow, Guoyuan Fu, C. Lee, Jia Di, S. C. Smith, H. A. Mantooth, and M. Schupbach, “Delay-insensitive asynchronous ALU for cryogenic temperature environments,” in 51st Midwest Symposium on Circuits and Systems, 2008. MWSCAS 2008, 2008, pp. 322-325.

[25] A. D. Bailey, Jia Di, S. C. Smith, and H. A. Mantooth, “Ultra-low power delay-insensitive circuit design,” in 51st Midwest Symposium on Circuits and Systems, 2008. MWSCAS 2008, 2008, pp. 503-506.

[26] H. A. Mantooth, O. Saadeh, E. Johnson, J. C. Balda, S. S. Ang, A. B. Lostetter, and R. M. Schupbach, “Solid-state fault current limiters: Silicon versus silicon carbide,” in 2008 IEEE Power and Energy Society General Meeting – Conversion and Delivery of Electrical Energy in the 21st Century, 2008, pp. 1-5.

[27] O. S. Saadeh, H. A. Mantooth, J. C. Balda, A. K. Agarwal, and A. S. Kashyap, “The modeling and characterization of silicon carbide thyristors,” in IEEE Power Electronics Specialists Conference, 2008. PESC 2008, 2008, pp. 1092-1097.

[28] E. Johnson, O. S. Saadeh, H. A. Mantooth, J. C. Balda, S. S. Ang, and A. K. Agarwal, “An analysis of paralleled SiC bipolar devices,” in IEEE Power Electronics Specialists Conference, 2008. PESC 2008, 2008, pp. 4762-4765.

[29] M. Francis, D. Dimitrov, J. Holmes, and A. Mantooth, “Modeling and Analysis Method for Radiation-Induced Upsets in Modern IC Device Models,” in 2008 IEEE Aerospace Conference, 2008, pp. 1-10.

[30] J. Bourne, R. Schupbach, B. Hollosi, Jia Di, A. Lostetter, and H. A. Mantooth, “Ultra-Wide Temperature (-230°C to 130°C) DC-Motor Drive with SiGe Asynchronous Controller,” in 2008 IEEE Aerospace Conference, 2008, pp. 1-15.

[31] B. O. Woods, H. A. Mantooth, and J. D. Cressler, “SiGe HBT compact modeling for extreme temperatures,” in Semiconductor Device Research Symposium, 2007 International, 2007, pp. 1-2.

[32] J. Carr, D. Hotz, J. C. Balda, H. Alan Mantooth, and A. Ong, “Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources,” in Conference Record of the 2007 IEEE Industry Applications Conference, 2007. 42nd IAS Annual Meeting, 2007, pp. 336-341.

[33] Weifeng Li, O. Abbasi, N. S. Hingora, Yongfeng Feng, and H. A. Mantooth, “Certify— A characterization and validation tool for behavioral models,” in Behavioral Modeling and Simulation Workshop, 2007. BMAS 2007. IEEE International, 2007, pp. 40-45.

[34] A. M. Francis, M. Turowski, J. A. Holmes, and H. A. Mantooth, “Efficient modeling of single event transients directly in compact device models,” in Behavioral Modeling and Simulation Workshop, 2007. BMAS 2007. IEEE International, 2007, pp. 73-77.

[35] A. Mantooth, A. Francis, W. Zheng, and Y. Feng, “Modelling tools built upon the hardware description language foundation,” IET Computers & Digital Techniques, vol. 1, no. 5, pp. 519-527, Sep. 2007.

[36] A. Medury, J. Carr, C. Balda, and H. A. Mantooth, “An Evaluation of Two-Level and Three-Level Zero-Voltage Zero-Current Switching Converters,” in IEEE Power Electronics Specialists Conference, 2007. PESC 2007, 2007, pp. 761-767.

[37] Tiejun Cao, H. P. Hoang, B. O. Woods, and H. A. Mantooth, “A SiGe BiCMOS Variable Gain Amplifier for Cryogenic Temperature Applications,” in IEEE International Symposium on Circuits and Systems, 2007. ISCAS 2007, 2007, pp. 949-952.

[38] A. Ong, J. Carr, J. Balda, and A. Mantooth, “A Comparison of Silicon and Silicon Carbide MOSFET Switching Characteristics,” in 2007 IEEE Region 5 Technical Conference, 2007, pp. 273-277.

[39] A. Medury, J. Carr, J. Balda, H. Mantooth, and T. Funaki, “Three-Level ZVZCS and ZVS Half-Bridge Converters: A Comparative Evaluation,” in Power Conversion Conference – Nagoya, 2007. PCC ’07, 2007, pp. 892-898.

[40] J. Garrett, R. Schupbach, A. B. Lostetter, and H. A. Mantooth, “Development of a DC Motor Drive for Extreme Cold Environments,” in 2007 IEEE Aerospace Conference, 2007, pp. 1-12.

[41] T. R. McNutt, A. R. Hefner, H. A. Mantooth, D. Berning, and Sei-Hyung Ryu, “Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence,” IEEE Transactions on Power Electronics, vol. 22, no. 2, pp. 353-363, Mar. 2007.

[42] J. M. Hornberger, E. Cilio, R. M. Schupbach, A. B. Lostetter, and H. A. Mantooth, “A High-Temperature Multichip Power Module (MCPM) Inverter utilizing Silicon Carbide (SiC) and Silicon on Insulator (SOI) Electronics,” in 37th IEEE Power Electronics Specialists Conference, 2006. PESC ’06, 2006, pp. 1-7.

[43] M. R. Hoque, T. Ahmad, T. R. McNutt, H. A. Mantooth, and M. M. Mojarradi, “A technique to increase the efficiency of high-voltage charge pumps,” IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 53, no. 5, pp. 364- 368, May 2006.

[44] J. M. Homberger, S. D. Mounce, R. M. Schupbach, A. B. Lostetter, and H. A. Mantooth, “High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications,” in Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005, 2005, vol. 1, pp. 393- 398 Vol. 1.

[45] H. A. Mantooth, “Modeling tools built upon the HDL foundation,” in Behavioral Modeling and Simulation Workshop, 2005. BMAS 2005. Proceedings of the 2005 IEEE International, 2005, pp. 118- 123.

[46] Yongfeng Feng, Wei Zheng, Xiaoling Huang, and H. A. Mantooth, “Model topology formulation for nonlinear dynamic behavioral modeling,” in Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005, 2005, pp. 721- 724.

[47] W. Zheng, Y. Feng, X. Huang, and H. A. Mantooth, “Ascend: automatic bottom-up behavioral modeling tool for analog circuits,” in IEEE International Symposium on Circuits and Systems, 2005. ISCAS 2005, 2005, pp. 5186- 5189 Vol. 5.

[48] M. R. Hoque, T. Ahmad, T. McNutt, A. Mantooth, and M. M. Mojarradi, “Design technique of an on-chip, high-voltage charge pump in SOI,” in IEEE International Symposium on Circuits and Systems, 2005. ISCAS 2005, 2005, pp. 133- 136 Vol. 1.

[49] V. Chaudhary, M. Francis, W. Zheng, A. Mantooth, and L. Lemaitre, “Automatic generation of compact semiconductor device models using Paragon and ADMS,” in Behavioral Modeling and Simulation Conference, 2004. BMAS 2004. Proceedings of the 2004 IEEE International, 2004, pp. 107- 112.

[50] A. S. Kashyap, C. Vemulapally, and H. A. Mantooth, “VHDL – AMS modeling of silicon carbide power semiconductor devices,” in 2004 IEEE Workshop on Computers in Power Electronics, 2004. Proceedings, 2004, pp. 50- 54.

[51] M. Francis, V. Chaudhary, and H. A. Mantooth, “Compact semiconductor device modelling using higher level methods,” in Proceedings of the 2004 International Symposium on Circuits and Systems, 2004. ISCAS ’04, 2004, vol. 5, p. V-109- V-112 Vol.5.

[52] T. R. McNutt, A. R. Hefner, H. A. Mantooth, J. Duliere, D. W. Berning, and R. Singh, “Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator,” IEEE Transactions on Power Electronics, vol. 19, no. 3, pp. 573- 581, May 2004.

[53] X. Huang, A. M. Francis, A. B. Lostetter, and H. A. Mantooth, “Compact modeling of environmentally induced radiation effects on electrical devices,” in 2004 IEEE Aerospace Conference, 2004. Proceedings, 2004, vol. 4, pp. 2597-2607 Vol.4.

[54] J. Hornberger, A. B. Lostetter, K. J. Olejniczak, T. McNutt, S. M. Lal, and A. Mantooth, “Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments,” in 2004 IEEE Aerospace Conference, 2004. Proceedings, 2004, vol. 4, pp. 2538-2555 Vol.4.

[55] Xiaoling Huang and H. A. Mantooth, “Identification and modelling of nonlinear dynamic behavior in analogue circuits,” in Design, Automation and Test in Europe Conference and Exhibition, 2004. Proceedings, 2004, vol. 1, pp. 460- 465 Vol.1.

[56] A. S. Kashyap, P. L. Ramavarapu, S. Maganlal, T. R. McNutt, A. B. Lostetter, and H. A. Mantooth, “Modeling vertical channel junction field effect devices in silicon carbide,” in Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual, 2004, vol. 4, pp. 3009- 3014 Vol.4.

[57] T. McNutt, A. Hefner, A. Mantooth, D. Berning, and Ranbir Singh, “Compact models for silicon carbide power devices,” in Semiconductor Device Research Symposium, 2003 International, 2003, pp. 472- 473.

[58] Pinki Mallick, M. Francis, V. Chandrasekhar, A. Austin, and H. A. Mantooth, “Achieving language independence with Paragon,” in Proceedings of the 2003 International Workshop on Behavioral Modeling and Simulation, 2003. BMAS 2003, 2003, pp. 149- 153.

[59] M. R. Hoque, T. McNutt, J. Zhang, A. Mantooth, and M. Mojarradi, “A high voltage Dickson charge pump in SOI CMOS,” in Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003, 2003, pp. 493- 496.

[60] Xiaoling Huang, C. S. Gathercole, and H. A. Mantooth, “Modeling nonlinear dynamics in analog circuits via root localization,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 22, no. 7, pp. 895- 907, Jul. 2003.

[61] T. McNutt, A. Hefner, A. Mantooth, D. Berning, and Sei-Hyung Ryu, “Silicon carbide power MOSFET model and parameter extraction sequence,” in Power Electronics Specialist Conference, 2003. PESC ’03. 2003 IEEE 34th Annual, 2003, vol. 1, pp. 217- 226 vol.1.

[62] H. A. Mantooth, L. Ren, X. Huang, Y. Feng, and W. Zheng, “A survey of bottom-up behavioral modeling methods for analog circuits,” in Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS ’03, 2003, vol. 3, p. III-910- III-913 vol.3.

[63] H. A. Mantooth and G. G. . Gielen, “Guest editorial,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 22, no. 2, pp. 121- 123, Feb. 2003.

[64] V. Chaudhary, M. Francis, Xiaoling Huang, and H. A. Mantooth, “Paragon-a mixed-signal behavioral modeling environment,” in IEEE 2002 International Conference on Communications, Circuits and Systems and West Sino Expositions, 2002, vol. 2, pp. 1315- 1321 vol.2.

[65] T. R. McNutt, A. R. Hefner, H. A. Mantooth, J. L. Duliere, D. W. Berning, and R. Singh, “Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models,” in Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual, 2002, vol. 3, pp. 1269- 1276 vol.3.

[66] T. McNutt, A. Hefner, A. Mantooth, J. Duliere, D. Berning, and R. Singh, “Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator,” in Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual, 2001, vol. 4, pp. 2103-2108 vol. 4.

[67] C. Gathercole and H. A. Mantooth, “Pole-zero localization: a behavioral modeling approach,” in Proceedings of the Fifth IEEE International Workshop on Behavioral Modeling and Simulation, 2001. BMAS 2001, 2001, pp. 59-65.

[68] H. A. Mantooth, J. P. Skudlarek, J. R. Carlson, D. K. Cooper, I. E. Getreu, G. Graham, S. Pothier, R. Vedam, and C. M. Wolff, “Power semiconductor device modeling with Model Architect,” in The 7th Workshop on Computers in Power Electronics, 2000. COMPEL 2000, 2000, pp. 3-9.

[69] X. Huang and H. A. Mantooth, “Event-driven electrothermal modeling of mixed-signal circuits,” in 2000 IEEE/ACM International Workshop on Behavioral Modeling and Simulation, 2000. Proceedings, 2000, pp. 10-15.

[70] W. Brown, A. Elshabini, S. Ang, J. Balda, F. Barlow, R. Coubillion, A. Malshe, R. Malstrom, A. Mantooth, T. Martin, H. Naseem, R. Jones, W. Waite, R. Brown, N. Schmitt, D. Nutter, G. Salamo, L. Schaper, W. Schmidt, R. Selvam, S. Singh, K. Olejniczak, R. Ulrich, J. Yeargan, E. Yaz, and W. White, “Curriculum restructure to answer critical needs in packaging for energy efficiency/renewable energy systems, wireless, and mixed-signal systems areas,” in Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th, 2000, pp. 1278-1284.

[71] H. A. Mantooth, J. R. Yeargan, and S. S. Ang, “Preparing graduate students for the challenges of mixed-signal design/test in Y2K and beyond,” in 1999 Southwest Symposium on Mixed-Signal Design, 1999. SSMSD ’99, 1999, pp. 77-80.

[72] J. Valle-Mayorga, C. Gutshall, K. Phan, I. Escorcia-Carranza, A. Mantooth, B. Reese, M. Schupbach, and A. Lostetter, “High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules,” IEEE Transactions on Power Electronics, vol. PP, no. 99, pp. 1-1.

[73] J. Hornberger, S. Mounce, R. Schupbach, B. McPherson, H. Mustain, A. Mantooth, W. Brown, and A. B. Lostetter, “High-temperature integration of silicon carbide (SiC) and silicon-on-insulator (SOI) electronics in multichip power modules (MCPMs),” in 2005 European Conference on Power Electronics and Applications, p. 10 pp.-P.10.