The MSCAD group is pleased to announce a new paper in the second of IEEE Transactions on Power Electronics for 2014, now available online.
[1] N. Ericson, S. Frank, C. Britton, L. Marlino, S.-H. Ryu, D. Grider, A. Mantooth, M. Francis, R. Lamichhane, M. Mudholkar, P. Shepherd, M. Glover, J. Valle-Mayorga, T. McNutt, A. Barkley, B. Whitaker, Z. Cole, B. Passmore, and A. Lostetter, “A 4H Silicon Carbide Gate Buffer for Integrated Power Systems,” IEEE Transactions on Power Electronics, vol. 29, no. 2, pp. 539–542, 2014.