Unified Si/SiC Compact IGBT Model

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Licensed under the University of Arkansas.

The Unified Si/SiC Compact IGBT Model presented here can predict both n-channel and p-channel formulation.  The SiC IGBTs used for dc, CV and switching validation are a 12.5 kV n-channel device and a 13 kV p-channel device, while the Si IGBT chosen was IXDH30N120 from IXYS. To consider the two-stage voltage rise transient behavior, the field-stop layer has also been modeled.