Sic Power MOSFET Compact Device Model

By: Mihir Mudholkar, Shamim Ahmed, Ty McNutt, Ramchandra Kotecha, Arman-Ur-Rashid, Tom Vrotsos, Dr. Alan Mantooth

1. University of Arkansas, Fayetteville, MSCAD Laboratory

Licensed under the University of Arkansas.
A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV,and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET.

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The SiC Power MOSFET model presented here is based on the analytical model published in [1] and [2]. A 1200 V, CREE device (C2M0025120D) has been used in this work to illustrate the parameter extraction and model validation. Chapter 2 explains the process of parameter extraction sequence using the device datasheet and Chapter 3 shows the model validation using double pulse tester circuit. Chapter 4 shows the comparison between MAST and Verilog-A codes of the model. Chapter 5 entails all the parameters used in the model and Chapter 6 comprises of the model equations. Finally, chapter 7 includes the people involved in this project.

Supporting Documents

Parameter List

SiC Power MOSFET Manual

 

Version Released Status  
1.0.0 August 9, 2016 Published View version>>

 

[1] T. R. McNutt, A. R. Hefner, H. A. Mantooth, D. Berning, and S. H. Ryu, “ Silicon carbide power MOSFET model and parameter extraction sequence,” IEEE Trans. Power Electron., vol. 22, no. 2, pp. 353-363, Mar. 2007.[2] M. Mudholkar, S. Ahmed, M. N. Ericson, S. S. Frank, C. L. Britton, Jr., H. A. Mantooth, “Datasheet driven silicon carbide power MOSFET model”, IEEE Trans. Power Electron, vol. 29, no. 5, pp 2220-2228, May 2014.

 

 

 

 

 

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