Sic Power MOSFET Compact Device Model
By: Mihir Mudholkar, Shamim Ahmed, Ty McNutt, Ramchandra Kotecha, Arman-Ur-Rashid, Tom Vrotsos, Dr. Alan Mantooth
1. University of Arkansas, Fayetteville, MSCAD Laboratory
The SiC Power MOSFET model presented here is based on the analytical model published in  and . A 1200 V, CREE device (C2M0025120D) has been used in this work to illustrate the parameter extraction and model validation. Chapter 2 explains the process of parameter extraction sequence using the device datasheet and Chapter 3 shows the model validation using double pulse tester circuit. Chapter 4 shows the comparison between MAST and Verilog-A codes of the model. Chapter 5 entails all the parameters used in the model and Chapter 6 comprises of the model equations. Finally, chapter 7 includes the people involved in this project.
|1.0.0||August 9, 2016||Published||View version>>|